gsot03 thru gsot36c vishay semiconductors formerly general semiconductor document number 88347 www.vishay.com 20-jun-02 1 new product miniature transient voltage suppressors 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 top view .102 (2.6) .007 (0.175) .045 (1.15) .110 (2.8) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) features ?transient protection for data lines as per iec 1000-4-2 (esd) 15kv (air), 8kv (contact) iec 1000-4-4 (eft) 40a (tp = 5/50ns) iec 1000-4-5 (lightning) 24a (tp = 8/20 s) bidirectional or unidirectional configurations available ?devices with a "c" suffix have dual diodes, which can protect two unidirectional lines with pin 3 used as a common anode connection, or a single bidirectional line between pins 1 & 2. ?ideal for esd protection to-236ab (sot-23) mechanical data case: sot-23 plastic package weight: approx. 0.008g terminals: solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 230? for 10 seconds. packaging codes ?options: e8 ?10k per 13 reel (8mm tape) e9 ?3k per 7 reel (8mm tape) dimensions in inches and (millimeters) mounting pad layout maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol value unit peak power dissipation (1) for 8/20 s pulse p pk 300 w forward surge current for single 8.3ms half sine wave i fsm 10 a operating and storage temperature range t j, t stg ?5 to +150 ? notes: (1) nonrepetitive current pulse and derate above t a = 25?. for gsot03, gsot03c, gsot04, gsot04c the peak power dissipation is 270w. (2) fr-5 = 1.0 x 0.75 x 0.62 in. gs0txxc gs0txx dual single top view
gsot03 thru gsot36c vishay semiconductors formerly general semiconductor www.vishay.com document number 88347 2 20-jun-02 electrical characteristics (t j = 25? unless otherwise noted) part device rated minimum maximum maximum maximum maximum number (1) marking stand-off breakdown clamping clamping leakage capacitance code voltage voltage voltage voltage current @1ma @i p = 1a (2) @i p = 5a (2) @v wm @0v, 1mh z v wm v (br) v c v c i d c volts volts volts volts apf gsot03 03 3.3 4.0 6.5 7.5 125 800 gsot03c 03c 3.3 4.5 7.0 9.0 125 600 gsot04 04 4.0 5.0 8.5 10.5 125 800 gsot04c 04c 4.0 5.0 8.5 10.5 125 600 gsot05 05 5.0 6.0 9.8 12.5 100 550 gsot05c 05c 5.0 6.0 9.8 12.5 100 400 gsot08 08 8.0 8.5 13.4 15.0 10 400 gsot08c 08c 8.0 8.5 13.4 15.0 10 350 gsot12 12 12.0 13.3 19.0 28.0 2 185 gsot12c 12c 12.0 13.3 19.0 28.0 2 150 gsot15 15 15.0 16.7 24.0 35.0 1 140 gsot15c 15c 15.0 16.7 24.0 35.0 1 100 gsot24 24 24.0 26.7 43.0 60.0 1 83 gsot24c 24c 24.0 26.7 43.0 60.0 1 63 gsot36 36 36.0 40 60.0 75.0 1 80 gsot36c 36c 36.0 40 60.0 75.0 1 60 note: (1) part numbers with a ? suffix are bidirectional devices (dual junction) (2) 8/20 s waveform used (see figure 2)
gsot03 thru gsot36c vishay semiconductors formerly general semiconductor document number 88347 www.vishay.com 20-jun-02 3 ratings and characteristic curves (t a = 25? unless otherwise noted) p ppm peak pulse power (w) fig. 1 non-repetitive peak pulse power vs. pulse time 100 1000 10000 0.1 1.0 10 td pulse duration ( s) 100 1000 10000 0 50 100 90 80 70 60 40 30 20 10 110 i ppm peak pulse current, % i rsm fig. 2 pulse waveform pulse width (td) is defined as the point where the peak current decays to 50% of i ppm 0 10 5 15 20 30 25 t time ( s) t l lead temperature c fig. 3 power derating curve 10 t d = i pp 2 0 20 40 60 80 100 % of rated power 0 50 25 75 100 125 150 average power peak pulse power 8/20 s 300w, 8/20 s waveshape
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